It is found that the main electronic conduction mechanism in the high field regions of the i - v characteristics is identified to be fowlernordheim tunneling . the effect of y ray on sic mos c - v characteristics depends strongly on the bias voltage applied to the gate electrode during irrad 当氧化层中存在较强电场时，电离辐照对s汇mos电容的影响会更明显， sicmos器件比st器件具有更好的抗y辐照的能力。
